Optoelectronics homework

2017  eidgenössische technische hochschule zü130/230m homework rk #1: si crystal structure; intrinsic semiconductor; doping; carrier rk #2: density of states and the fermi function; energy band diagram, mobility and drift; resistivity and rk #3: nonuniformly doped semiconductor; generation and recombination of carriers; continuity equation; quasi-fermi rk #4: metal-semiconductor (m-s) energy-band diagrams; m-s electrostatics; practical ohmic contact; small-signal capacitance of a schottky rk #5: pn junction electrostatics; p-i-n- diode; pn junction diode current components; comparison of schottky and pn diodes rk #6: narrow-base diode; pn junction breakdown; effect of series resistance on diode i-v; effect of recombination-generation in the depletion region assignment (due 3/7/13).

Optoelectronics ing the infrared spectrum with quantum combining confinement inside heterostructures with optical confinement at the micro and nanoscale, new devices are created where electron and photons flows are engineered.

Research interests include: molecular beam epitaxy, nanofabrication, optoelectronics, non-linear optics, single electron devices, and quantum computing.

607-255-6317       fax:Email: at semiconductor optoelectronics group conducts research in diverse d to semiconductor optoelectronic devices, terahertz devices,Optical and terahertz ultrafast spectroscopy, experimental physics, and the optical onic properties of semiconductor underlying themes behind most of the d out by the group is the engineering of the properties ons and photons in semiconductor micro and nano structures e novel devices, study new science at small scales in (micro- and nano-sized devices) and time (ultrafast devices),And use novel physics to solve engineering problems and ific challenges in the development of new technologies.

230m homework rk #1: si crystal structure; intrinsic semiconductor; doping; carrier rk #2: density of states and the fermi function; energy band diagram, mobility and drift; resistivity and rk #3: nonuniformly doped semiconductor; generation and recombination of carriers; continuity equation; quasi-fermi rk #4: metal-semiconductor (m-s) energy-band diagrams; m-s electrostatics; practical ohmic contact; small-signal capacitance of a schottky rk #5: pn junction electrostatics; p-i-n- diode; pn junction diode current components; comparison of schottky and pn diodes rk #6: narrow-base diode; pn junction breakdown; effect of series resistance on diode i-v; effect of recombination-generation in the depletion region assignment (due 3/7/13).

It also contains sets of foils that used as viewgraphs on important issues in semiconductor information contained in this site is based on my book:Semiconductor devices: basic principles, john-wiley, information is for the individual use of students rs and should not be used for commercial purposes wihout my uction to ons to homework ons to homework ons to homework ons to homework ons to homework ons to homework ons to homework ons to homework ons to homework ons to homework ons to the files on semiconductor technology:The files contained here are prepared to help students get an important concepts in semiconductor technology.

Home

Sitemap